SSM6K211FE 2008-11-21 1 toshiba field-effect transistor silicon n-channel mos type (u-mos ) SSM6K211FE high-speed switching applications power management switch applications ? 1.5-v drive ? low on-resistance: r on = 118 m (max) (@v gs = 1.5 v) r on = 82 m (max) (@v gs = 1.8 v) r on = 59 m (max) (@v gs = 2.5 v) r on = 47 m (max) (@v gs = 4.5 v) absolute maximum ratings (ta = 25 ?c) characteristic symbol rating unit drain-source voltage v dss 20 v gate-source voltage v gss 10 v dc i d 3.2 drain current pulse i dp 6.4 a drain power dissipation p d (note 1) 500 mw channel temperature t ch 150 c storage temperature t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause th is product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on an fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 ) marking equivalent circuit (top view) unit: mm jedec D jeita D toshiba 2-2n1j weight: 3 mg (typ.) es6 1,2, 5, 6: drain 3: gate 4: source 6 nq 4 1 2 3 5 4 123 65
SSM6K211FE 2008-11-21 2 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit v (br) dss i d = 1 ma, v gs = 0 v 20 ? ? drain-source breakdown voltage v (br) dsx i d = 1 ma, v gs = ?10 v 12 ? ? v drain cutoff current i dss v ds = 20 v, v gs = 0 v ? ? 1 a gate leakage current i gss v gs = 10 v, v ds = 0 v ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 1 ma 0.35 ? 1.0 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 2.0 a (note 2) 5.5 11.0 ? s i d = 2.0 a, v gs = 4.5 v (note 2) ? 36 47 i d = 2.0 a, v gs = 2.5 v (note 2) ? 44 59 i d = 1.0 a, v gs = 1.8 v (note 2) ? 55 82 drain-source on-resistance r ds (on) i d = 0.5 a, v gs = 1.5 v (note 2) ? 66 118 m input capacitance c iss ? 510 ? output capacitance c oss ? 98 ? reverse transfer capacitance c rss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 85 ? pf total gate charge q g ? 10.8 ? gate-source charge q gs ? 8.6 ? gate-drain charge q gd v ds = 10 v, i d = 3.2 a v gs = 4.5 v ? 2.2 ? nc turn-on time t on ? 16 ? switching time turn-off time t off v dd = 10 v, i d = 1.0 a, v gs = 0 to 2.5 v, r g = 4.7 ? 40 ? ns drain-source forward voltage v dsf i d = ?3.2 a, v gs = 0 v (note 2) ? ?0.84 ?1.2 v note 2: pulse test switching time test circuit usage considerations let v th be the voltage applied between gate and sour ce that causes the drain current (i d ) to below (1 ma for the SSM6K211FE). then, for normal switching operation, v gs(on) must be higher than v th, and v gs(off) must be lower than v th. this relationship can be expressed as: v gs(off) < v th < v gs(on). take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2.5 v t on t off (b) v in (c) v out 0 v v dd v ds (on) t r t f 10% 90% 90% 10% (a) test circuit v dd = 10 v r g = 4.7 d.u. 1% v in : t r , t f < 5 ns common source ta = 25c 0 2.5 v in out v dd 10 s r g
SSM6K211FE 2008-11-21 3 gate-source voltage v gs (v) i d ? v gs drain current i d (a) 10 0 0.1 1 0.001 0.01 0.0001 2.0 1.0 drain current i d (a) r ds (on) ? i d drain-source on-resistance r ds (on) (m ) 0 2 6 4 0 100 200 ambient temperature ta (c) v th ? ta gate threshold voltage v th (v) 0.8 0 ? 50 0 150 0.2 0.4 0.6 1.0 50 100 ambient temperature ta (c) r ds (on) ? ta drain-source on-resistance r ds (on) (m ) 0 ? 50 0 50 150 120 100 60 drain-source on-resistance r ds (on) (m ) 0 2 6 gate-source voltage v gs (v) 0 100 200 r ds (on) ? v gs drain-source voltage v ds (v) i d ? v ds drain current i d (a) 0 5 0 0.4 0.6 1.0 1 2 0.8 7 0.2 3 4 6 4 8 common source v ds = 3 v ta = 100 c ? 25 c 25 c 1.5 v 2.5 v 1.8 v 4.5 v common source ta = 25 c v gs = 1.2 v 25 c v gs = 4.5 v 2.5 v 1.8 v common source ta = 25c 1.5v 1.0 a / 1.8 v i d = 2.0 a / v gs = 4.5 v common source common source v ds = 3 v i d = 1 ma i d = 2.0a common source ta = 100 c ? 25 c 10 v 0.5 a / 1.5 v 2.0 a / 2.5 v 20 40 80 100
SSM6K211FE 2008-11-21 4 drain reverse current i dr (a) drain-source voltage v ds (v) i dr ? v ds 10 0 0.1 1 0.001 0.01 0.0001 -0.2 -0.6 -0.4 -1.0 -0.8 -1.2 drain current i d (a) forward transfer admittance ? y fs ? (s) |y fs | ? i d 0.01 10 0.001 0.1 1 10 0.01 0.1 1 30 3 0.3 0.03 drain-source voltage v ds (v) c ? v ds capacitance c (pf) 10 0.1 1 10 100 100 1000 300 30 drain current i d (a) switching time t (ns) t ? i d 1 0.01 100 0.1 1000 1 10 10 common source ta = 25 c f = 1 mhz v gs = 0 v c iss c oss c rss common source v ds = 3 v ta = 25 c common source v dd = 10 v v gs = 0 to 2.5 v ta = 25 c r g = 4.7 common source v gs = 0 v ta = 25 c g d s i dr 100 c 25 c ? 25 c t off t f t on t r total gate charge qg (nc) dynamic input characteristic gate-source voltage v gs (v) 0 0 5 10 4 8 15 10 6 2 common source i d = 3.2 a ta = 25c v dd =16 v v dd =10 v 20 25
SSM6K211FE 2008-11-21 5 ambient temperature t a (c) p d ? t a drain power dissipation p d (mw) 800 0 200 120 100 140 400 600 160 1000 80 60 40 20 0 -20 -40 mounted on fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 ) pulse width t w (s) r th ? t w transient thermal impedance r th (c/w ) 0.001 1000 0.01 0.1 1 100 10 100 1000 1 10 single pulse mounted on fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 )
SSM6K211FE 2008-11-21 6 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before creating and producing des igns and using, customers mus t also refer to and comply with (a) the latest versions of all re levant toshiba information, including without limitation, this d ocument, the specifications, the data sheets and applic ation notes for product and the precautions and conditions set forth in the ?tosh iba semiconductor reliability handbook? and (b) t he instructions for the application that product will be used with or for. custome rs are solely responsible for all aspects of t heir own product design or applications, incl uding but not limited to (a) determining th e appropriateness of the use of this product in such design or applications; (b) evaluating and det ermining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? 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